- 您现在的位置：买卖IC网 > Sheet目录514 > SIA406DJ-T1-GE3 (Vishay Siliconix)MOSFET N-CH D-S 12V SC-70-6
New Product
SiA406DJ
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
12
11
- 2.9
V
mV/°C
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
V GS(th)
I GSS
I DSS
I D(on)
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 8 V
V DS = 12 V, V GS = 0 V
V DS = 12 V, V GS = 0 V, T J = 55 °C
V DS ≤ 5 V, V GS = 4.5 V
0.4
20
1.0
± 100
1
10
V
nA
μA
A
V GS = 4.5 V, I D = 10.8 A
0.0165
0.0198
Drain-Source On-State Resistance a
R DS(on)
V GS = 2.5 V, I D = 10.2 A
0.0185
0.0222
Ω
V GS = 1.8 V, I D = 3 A
0.0220
0.0264
Forward Transconductance a
g fs
V DS = 6 V, I D = 10.8 A
38
S
Dynamic b
Input Capacitance
C iss
1380
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 6 V, V GS = 0 V, f = 1 MHz
345
155
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 6 V, V GS = 5 V, I D = 10.8 A
V DS = 6 V, V GS = 4.5 V, I D = 10.8 A
15.2
13.7
2.6
23
21
nC
Gate-Drain Charge
Q gd
1.1
Gate Resistance
R g
f = 1 MHz
0.5
2.5
5
Ω
Turn-On Delay Time
t d(on)
10
20
Rise Time
Turn-Off Delay Time
t r
t d(off)
V DD = 6 V, R L = 0.7 Ω
I D ? 8.6 A, V GEN = 4.5 V, R g = 1 Ω
9
40
18
60
Fall Time
Turn-On Delay Time
t f
t d(on)
14
6
21
12
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 6 V, R L = 0.7 Ω
I D ? 8.6 A, V GEN = 8 V, R g = 1 Ω
11
27
9
17
41
18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
I S
I SM
T C = 25 °C
4.5 c
20
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 8.6 A, V GS = 0 V
I F = 8.6 A, dI/dt = 100 A/μs, T J = 25 °C
0.8
22
7
8
14
1.2
33
14
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65361
S09-1924-Rev. A, 28-Sep-09
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SIA421DJ-T1-GE3
MOSFET P-CH 30V 12A SC70-6
SIA432DJ-T1-GE3
MOSFET N-CH 30V 12A SC70-6
SIA443DJ-T1-GE3
MOSFET P-CH 20V 9A SC70-6
SIA448DJ-T1-GE3
MOSFET N-CH 20V D-S SC70-6L
SIA461DJ-T1-GE3
MOSFET P-CH 20V 12A SC706L
SIA511DJ-T1-GE3
MOSFET N/P-CH 12V PWRPAK SC70-6
SIA513DJ-T1-GE3
MOSFET N/P-CH 20V PWRPAK SC70-6
SIA533EDJ-T1-GE3
MOSFET N/P-CH 12V 4.5A SC70-6
相关代理商/技术参数
SIA408DJ
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET
SIA408DJ-T1-E3
功能描述:MOSFET 30V 4.5A 17.9W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA408DJ-T1-GE3
功能描述:MOSFET 30V 4.5A 17.9W 36mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA411DJ-T1-E3
功能描述:MOSFET 20V 12A 19W 30mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA411DJ-T1-GE3
功能描述:MOSFET 20V 12A 19W 30mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA413DJ
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET
SIA413DJ-T1-E3
功能描述:MOSFET 12V 12A 19W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA413DJ-T1-GE3
功能描述:MOSFET 12V 12A 19W 29mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
